一种确定rm的简单方法的验证与分析

介绍一种测定蚜虫和螨的内禀增长率(rm)的简单方法。此法不要求详细的生 殖力表资料。计算rm的公式:rm=0.74ln(Md)/d。

一种改进的RM可调度性判定算法

固定优先级任务可调度性判定是实时系统调度理论研究的核心问题之一.目前已有的各种判定方法可归结为两大类:多项式时间调度判定和确切性判定.多项式时间调度判定通常采用调度充分条件来进行,为此,许多理想条件下基于RM(rate monotonic)调度算法的CPU利用率最小上界被提了出来.确切性判定利用RM调度的充要条件,保证任何任务集均可被判定,并且判定结果是确切的.但是由于时间复杂度较差,确切性判定方法难以实现在线分析.提出了一种改进的RM可调度性判定方法(improved schedulability test algorithm,简称ISTA).首先介绍了任务调度空间这一概念,并提出了二叉树表示,然后进一步提出了相关的剪枝理论.在此基础上,研究了任务之间可调度性的相关性及其对判定任务集可调度性的影响,提出并证明了相关的定理.最后基于提出的定理,给出了一种改进的伪多项式时间可调度性判定算法,并与已有的判定方法进行了比较.仿真结果表明,该算法平均性能作为任务集内任务个数的函数具有显著提高.

RM及其扩展可调度性判定算法性能分析

可调度性判定是实时调度算法的关键问题．单调速率算法RM（rate monotonic）及其扩展是应用广泛的实时调度算法，大量文献讨论了实时任务在这些算法下的可调度性判定，给出了相应的判定算法．但迄今为止，对这些判定算法的性能分析都是理论上的定性分析或者只是少数几种判定算法之间的简单比较，这不利于实时系统的开发．归纳了RM及其扩展的可调度性判定算法，通过测试平台，系统地测试和分析了各算法的性能和适用场合，讨论了各种条件和实现方式对算法性能和可调度性的影响．

Numerical Investigation of Richtmyer-Meshkov Instability Driven by Cylindrical Shocks

In this paper, a numerical method with high order accuracy and high resolution was developed to simulate the Richtmyer-Meshkov(RM) instability driven by cylindrical shock waves. Compressible Euler equations in cylindrical coordinate were adopted for the cylindrical geometry and a third order accurate group control scheme was adopted to discretize the equations. Moreover, an adaptive grid technique was developed to refine the grid near the moving interface to improve the resolution of numerical solutions. The results of simulation exhibited the evolution process of RM instability, and the effect of Atwood number was studied. The larger the absolute value of Atwood number, the larger the perturbation amplitude. The nonlinear effect manifests more evidently in cylindrical geometry. The shock reflected from the pole center accelerates the interface for the second time, considerably complicating the interface evolution process, and such phenomena of reshock and secondary shock were studied.

Optimal bounded control of first-passage failure of quasi-integrable Hamiltonian systems with wide-band random excitation

The optimal bounded control of quasi-integrable Hamiltonian systems with wide-band random excitation for minimizing their first-passage failure is investigated. First, a stochastic averaging method for multi-degrees-of-freedom (MDOF) strongly nonlinear quasi-integrable Hamiltonian systems with wide-band stationary random excitations using generalized harmonic functions is proposed. Then, the dynamical programming equations and their associated boundary and final time conditions for the control problems of maximizinig reliability and maximizing mean first-passage time are formulated based on the averaged It$\ddot{\rm o}$ equations by applying the dynamical programming principle. The optimal control law is derived from the dynamical programming equations and control constraints. The relationship between the dynamical programming equations and the backward Kolmogorov equation for the conditional reliability function and the Pontryagin equation for the conditional mean first-passage time of optimally controlled system is discussed. Finally, the conditional reliability function, the conditional probability density and mean of first-passage time of an optimally controlled system are obtained by solving the backward Kolmogorov equation and Pontryagin equation. The application of the proposed procedure and effectiveness of control strategy are illustrated with an example.

钢水连铸电磁搅拌的磁流体力学基础

本文从磁流体力学基本方程出发,导出一些无量钢参数:Re(雷诺数)、Rm(磁雷诺数)、Ha(哈特门数)和 N(磁互相作用参数),阐述这些无量纲参数的物理意义,结合钢水连铸电磁搅拌工况,讨论这些参数在其中的影响,为研究电磁搅拌现象及搅拌器设计计算提供一些定性结果。

磁流体管道中的高超声速流动特性

本文在磁雷诺数Rm=(VL/V_m)(?)1和磁作用参数N(?)1的情况下,讨论了连续磁场对可压导电介质在管道电极与绝缘体连接端面区高超声速流动的影响问题。用复变函数理论求解拉普拉斯方程,得出电流密度和洛伦茨力的解析式,并从计算中,找到了产生环电流的足够条件。导出高超声速流的扰动方程,得出扰动参量的积分公式,并对扰动方程进行数值解,揭示出与不可压介质相似的流动特性,并讨论了在各特殊点附近的流动特性。

硅基片上的自组装双层磷脂分子膜层

研究了L-α-磷脂酰乙醇胺分子(PE)与去污剂分子摩尔数之比Rm(P)/m(D)对磷脂分子在固体硅片表面自组装成膜的影响。通过椭偏技术测定磷脂膜层厚度,结合磷脂膜层表面疏水角的变化、磷脂分子头部亲水、尾部疏水的性质及与蛋白质分子的作用条件,得到:随着Rm(P)/m(D)在PE溶液中的增大,PE膜层在硅基片上的存在形式由单层向双层逐渐过渡。当对硝基苯酯基-聚乙二醇-(1,2-双油酰基-3-甘油磷脂乙醇胺)分子(pNP-PEG-DOPE)与已固定的PE分子反应时,分子间形成双层膜的机制也从pNP-PEG-DOPE与单层PE分子膜层的直接吸附逐渐过渡到取代上层PE分子并与下层PE分子吸附形成双层膜。

气/液界面上Richtmyer-Meshkov不稳定性的实验研究

报道了在国内首次实现的矩形激波管内气/液界面上(即Atwood number,A1)的Richtmyer-Meshkov(RM)不稳定性现象.实验在一台垂直矩形激波管中进行,得到了较低马赫数(M=1.36和1.58)下,多元扰动R-M不稳定性后期阶段气泡和尖钉高度对时间的增长规律,即气泡高度h_b ~ t~(0.55±0.01)1 ,尖钉高度h_s~ t.当激波马赫数从1.36增加到1.58时,气泡和尖钉高度对时间的指数规律没有发生明显改变,气泡的增长速度没有受到影响,而尖钉增长速度却有大幅度的增加.同时还观察研究了多元扰动R-M不稳定性中典型的气泡竞争现象.

Recent origin of a hominoid-specific splice form of neuropsin, a gene involved in learning and memory

Neuropsin is a secreted-type serine protease involved in learning and memory. The type II splice form of neuropsin is abundantly expressed in the human brain but not in the mouse brain. We sequenced the type II-spliced region of neuropsin gene in humans and representative nonhuman primate species. Our comparative sequence analysis showed that only the hominoid species (humans and apes) have the intact open reading frame of the type II splice form, indicating that the type II neuropsin originated recently in the primate lineage about 18 MYA. Expression analysis using RT-PCR detected abundant expression of the type II form in the frontal lobe of the adult human brain, but no expression was detected in the brains of lesser apes and Old World monkeys, indicating that the type II form of neuropsin only became functional in recent time, and it might contribute to the progressive change of cognitive abilities during primate evolution.

Regulation of zygotic gene activation in the preimplantation mouse embryo: Global activation and repression of gene expression

Superimposed on the activation of the embryonic genome in the preimplantation mouse embryo is the formation of a transcriptionally repressive state during the two-cell stage. This repression appears mediated at the level of chromatin structure, because it is reversed by inducing histone hyperacetylation or inhibiting the second round of DNA replication. We report that of more than 200 amplicons analyzed by mRNA differential display, about 45% of them are repressed between the two-cell and four-cell stages. This repression is scored as either a decrease in amplicon expression that occurs between the two-cell and four-cell stages or on the ability of either trichostatin A tan inhibitor of histone deacetylases) or aphidicolin tan inhibitor of replicative DNA polymerases) to increase the level of amplicon expression. Results of this study also indicate that about 16% of the amplicons analyzed likely are novel genes whose sequence doesn't correspond to sequences in the current databases, whereas about 20% of the sequences expressed during this transition likely are repetitive sequences. Lastly, inducing histone hyperacetylation in the two-cell embryos inhibits cleavage to the four-cell stage. These results suggest that genome activation is global and relatively promiscuous and that a function of the transcriptionally repressive state is to dictate the appropriate profile of gene expression that is compatible with further development.

外注入FP激光器的非线性状态研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.